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Design of an Absorptive High-Power PIN Diode Switch for an Ultra-Wideband Radar

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Title
Design of an Absorptive High-Power PIN Diode Switch for an Ultra-Wideband Radar
Other Titles
초광대역 레이더를 위한 흡수성 고전력 PIN 다이오드 스위치 설계
Authors
ELLURU, DEEPAK N.
AWASTHI, ABHISHEK K.
GOGINENI, S. PRASAD
TAYLOR, DREW
SHAHABI, ALI
LEMMON, ANDREW N.
CHUNG, CHANGHYUN
LEE, JOOHAN
Keywords
DriverMOSFETPIN diodesradarSPDTswitchT/R switch
Issue Date
2022-04
Citation
ELLURU, DEEPAK N., et al. 2022. "Design of an Absorptive High-Power PIN Diode Switch for an Ultra-Wideband Radar". IEEE Journal of Microwaves, 2(2): 286-296.
Abstract
This paper details the development of a low-loss, PIN diode single-pole double-throw (SPDT) absorptive switch for an ultra-wideband radar. The fabricated switch operates with a peak power of 200 watts at a 10% duty cycle. It has an insertion loss of less than 0.8 dB, a return loss greater than 19 dB, and isolates the transmitter and receiver beyond 37 dB over the frequency band (170 MHz-470MHz) for sensitive radar measurements. An external RF limiter and a low-power CMOS switch at the receiving end are used to reduce video leakage from the PIN diode switch and enhance the isolation up to 80 dB. A fast-switching MOSFET-based PIN diode driver circuit is designed with a dead-time control circuit to minimize the cross-conduction currents for the PIN diode switch. The rise and fall times for the PIN diode switch are less than 200 ns. The switch-driver includes integrated low-noise power supplies that generate -50 V, 15 V, and 5 V from a common rail 50 V input source.
URI
https://repository.kopri.re.kr/handle/201206/13646
DOI
http://dx.doi.org/10.1109/JMW.2021.3138889
Type
Article
Station
해당사항없음
Indexed
국외기타
Appears in Collections  
2021-2021, The Korean Route Exploration and Technology Development for Antarctic Inland Researches (21-21) / Lee, Khanghyun (PE21080)
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